Taiwan Semiconductor Type N-Channel MOSFET, 50 A, 60 V Enhancement, 4-Pin TO-252 TSM230N06CP ROG
- RS Stock No.:
- 171-3703
- Mfr. Part No.:
- TSM230N06CP ROG
- Manufacturer:
- Taiwan Semiconductor
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Subtotal (1 pack of 25 units)*
PHP1,135.325
(exc. VAT)
PHP1,271.575
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 7,075 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP45.413 | PHP1,135.33 |
| 50 - 75 | PHP38.956 | PHP973.90 |
| 100 - 475 | PHP34.094 | PHP852.35 |
| 500 + | PHP30.275 | PHP756.88 |
*price indicative
- RS Stock No.:
- 171-3703
- Mfr. Part No.:
- TSM230N06CP ROG
- Manufacturer:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Width | 5.8 mm | |
| Height | 2.3mm | |
| Automotive Standard | IEC 61249 | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Width 5.8 mm | ||
Height 2.3mm | ||
Automotive Standard IEC 61249 | ||
The Taiwan Semiconductor 60V, 50A, 28mΩ, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
100% avalanche tested
Fast switching
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
53W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
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