Infineon BSR316P Type P-Channel MOSFET, 360 mA, 100 V Enhancement, 3-Pin SC-59 BSR316PH6327XTSA1
- RS Stock No.:
- 170-2356
- Mfr. Part No.:
- BSR316PH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP359.10
(exc. VAT)
PHP402.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 22,700 unit(s) shipping from February 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | PHP17.955 | PHP359.10 |
| 100 - 480 | PHP17.416 | PHP348.32 |
| 500 - 980 | PHP16.893 | PHP337.86 |
| 1000 - 1980 | PHP16.387 | PHP327.74 |
| 2000 + | PHP15.895 | PHP317.90 |
*price indicative
- RS Stock No.:
- 170-2356
- Mfr. Part No.:
- BSR316PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-59 | |
| Series | BSR316P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 1.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-59 | ||
Series BSR316P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Width 1.6 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
All products in small signal packages are suitable for automotive applications
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics
Enhancement mode
Pb-free lead plating
Target Applications:
Automotive
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
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