Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252

RS Stock No.:: 170-2284
Mfr. Part No.:: IPD068N10N3GATMA1
Manufacturer:: Infineon

Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252

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Subtotal (1 reel of 2500 units)*

PHP160,410.00

(exc. VAT)

PHP179,660.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

17,500 unit(s) ready to ship from another location

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Units	Per Unit	Per Reel*
2500 +	PHP64.164	PHP160,410.00

*price indicative

RS Stock No.:: 170-2284
Mfr. Part No.:: IPD068N10N3GATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	IPD068N10N3 G
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	12.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	150W
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Standards/Approvals	No
	Length	6.73mm
	Width	7.47 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series IPD068N10N3 G
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 12.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 150W
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Standards/Approvals No
	Length 6.73mm
	Width 7.47 mm
	Automotive Standard No

RoHS Status: Not Applicable

Infineon MOSFET

The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Easy to design products

• Environmentally friendly

• Excellent gate charge x RDS (on) product (FOM)

• Excellent switching performance

• Halogen free

• Highest power density

• Increased efficiency

• Lead (Pb) free plating

• Less paralleling required

• Operating temperature ranges between -55°C and 175°C

• Smallest board space consumption

• Very low Qg and Qgd

• World's lowest RDS (on)

Applications

• Class D audio amplifiers

• Isolated DC-DC converters (telecom and data communication systems

• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)

• O-ring switches and circuit breakers in 48V systems

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC