N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD068N10N3GATMA1

The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Easy to design products
• Environmentally friendly
• Excellent gate charge x R DS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Ideal for high frequency switching and synchronous rectification
• Increased efficiency
• Lead (Pb) free plating
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)

• Class D audio amplifiers
• Isolated DC-DC converters (telecommunication and data communication systems)
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.