Name: N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3
Brand: IXYS
SKU: 168-4696
Price: 2138.15 PHP
Availability: InStock

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Select all	Attribute	Value
	Manufacturer	IXYS
	Channel Type	N
	Maximum Continuous Drain Current	82 A
	Maximum Drain Source Voltage	600 V
	Package Type	PLUS264
	Series	HiperFET, Q3-Class
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	75 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	6.5V
	Maximum Power Dissipation	1.56 kW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	275 nC @ 10 V
	Length	20.29mm
	Number of Elements per Chip	1
	Width	5.31mm
	Height	26.59mm
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer IXYS
	Channel Type N
	Maximum Continuous Drain Current 82 A
	Maximum Drain Source Voltage 600 V
	Package Type PLUS264
	Series HiperFET, Q3-Class
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 75 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 6.5V
	Maximum Power Dissipation 1.56 kW
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 275 nC @ 10 V
	Length 20.29mm
	Number of Elements per Chip 1
	Width 5.31mm
	Height 26.59mm
	Minimum Operating Temperature -55 °C

N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

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N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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