onsemi UltraFET Type N-Channel MOSFET, 7.5 A, 100 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 166-2601
- Mfr. Part No.:
- FDS3672
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
PHP103,645.00
(exc. VAT)
PHP116,082.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 + | PHP41.458 | PHP103,645.00 |
*price indicative
- RS Stock No.:
- 166-2601
- Mfr. Part No.:
- FDS3672
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | UltraFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series UltraFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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