Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON

RS Stock No.:: 165-6878
Mfr. Part No.:: BSZ086P03NS3GATMA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON

This image is representative of the product range

Subtotal (1 reel of 5000 units)*

PHP116,280.00

(exc. VAT)

PHP130,235.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from January 04, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
5000 +	PHP23.256	PHP116,280.00

*price indicative

RS Stock No.:: 165-6878
Mfr. Part No.:: BSZ086P03NS3GATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS P
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.1V
	Typical Gate Charge Qg @ Vgs	43.2nC
	Maximum Power Dissipation Pd	69W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	3.4mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS P
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.1V
	Typical Gate Charge Qg @ Vgs 43.2nC
	Maximum Power Dissipation Pd 69W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 3.4mm
	Automotive Standard No

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Infineon OptiMOS P Series MOSFET, 30V Drain Source Voltage, 40A Continuous Drain Current - BSZ086P03NS3GATMA1

This MOSFET is a P‑channel enhancement device designed for surface‑mount power switching in industrial temperature environments. It operates across an extended ambient range and is intended for high‑current switching roles where compact, low‑profile packaging is required.

Features and Benefits:

• 30V drain-source rating supports low‑voltage power rails
• 40A continuous drain current enables high‑current switching
• 13.4 mΩ low Rds(on) reduces conduction losses
• 69W maximum power dissipation manages thermal load
• 43.2 nC typical gate charge balances switching speed and drive demand
• 25V maximum gate-source voltage permits robust gate‑drive margins

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for DC motor control and drive stages
• Used for load switching in telecoms and server power systems
• Can be used for battery management and distribution circuits
• Suitable for compact power modules requiring low‑profile components

What package type should I expect for PCB assembly?

It is supplied in an 8‑pin TSDSON surface‑mount package suitable for automated pick‑and‑place and reflow soldering processes.

How does the device handle wide temperature ranges during operation?

The component is specified to operate from -55°C up to 150°C, allowing use in harsh industrial temperature conditions with appropriate thermal management.

What channel conduction polarity must the gate driver accommodate?

The device is P‑channel, so gate‑drive logic must be arranged for P‑type enhancement operation and appropriate pull‑up/pull‑down signalling.

Are there mounting or profile advantages to consider?

The low‑profile 1.1mm package height supports space‑constrained layouts and enables dense assembly in compact power designs.