Nexperia BSN20BK Type N-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSN20BKR
- RS Stock No.:
- 136-4845
- Mfr. Part No.:
- BSN20BKR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
PHP522.50
(exc. VAT)
PHP585.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,400 unit(s) shipping from June 03, 2026
- Plus 6,000 unit(s) shipping from June 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 400 | PHP5.225 | PHP522.50 |
| 500 - 900 | PHP4.474 | PHP447.40 |
| 1000 - 1900 | PHP3.919 | PHP391.90 |
| 2000 + | PHP3.481 | PHP348.10 |
*price indicative
- RS Stock No.:
- 136-4845
- Mfr. Part No.:
- BSN20BKR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | BSN20BK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.67W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series BSN20BK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.67W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.4 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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