Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

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Subtotal (1 pack of 2 units)*

PHP224.77

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PHP251.742

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 198PHP112.385PHP224.77
200 - 398PHP102.30PHP204.60
400 - 798PHP94.40PHP188.80
800 +PHP87.845PHP175.69

*price indicative

Packaging Options:
RS Stock No.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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