Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3
- RS Stock No.:
- 134-9725
- Mfr. Part No.:
- SIR668DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP195.24
(exc. VAT)
PHP218.66
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 7,366 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 198 | PHP97.62 | PHP195.24 |
| 200 - 398 | PHP88.86 | PHP177.72 |
| 400 - 798 | PHP82.00 | PHP164.00 |
| 800 + | PHP76.305 | PHP152.61 |
*price indicative
- RS Stock No.:
- 134-9725
- Mfr. Part No.:
- SIR668DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.05mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.05mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3