Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

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Subtotal (1 pack of 2 units)*

PHP195.24

(exc. VAT)

PHP218.66

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 198PHP97.62PHP195.24
200 - 398PHP88.86PHP177.72
400 - 798PHP82.00PHP164.00
800 +PHP76.305PHP152.61

*price indicative

Packaging Options:
RS Stock No.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

72nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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