DiodesZetex DMN Type N-Channel MOSFET, 130 A, 60 V Enhancement, 3-Pin TO-220 DMNH6008SCT
- RS Stock No.:
- 133-3382
- Mfr. Part No.:
- DMNH6008SCT
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP654.64
(exc. VAT)
PHP733.195
(inc. VAT)
Add 25 units to get free delivery
Temporarily out of stock
- Shipping from September 28, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP130.928 | PHP654.64 |
| 25 - 95 | PHP128.312 | PHP641.56 |
| 100 - 495 | PHP125.744 | PHP628.72 |
| 500 - 995 | PHP123.234 | PHP616.17 |
| 1000 + | PHP120.766 | PHP603.83 |
*price indicative
- RS Stock No.:
- 133-3382
- Mfr. Part No.:
- DMNH6008SCT
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 1.13W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 2.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 1.13W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 2.5 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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