DiodesZetex DMN3042LFDF Type N-Channel MOSFET, 7 A, 30 V Enhancement, 6-Pin UDFN DMN3042LFDF-7
- RS Stock No.:
- 133-3355
- Mfr. Part No.:
- DMN3042LFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP1,062.00
(exc. VAT)
PHP1,189.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | PHP21.24 | PHP1,062.00 |
| 250 - 950 | PHP19.116 | PHP955.80 |
| 1000 - 1950 | PHP17.205 | PHP860.25 |
| 2000 - 2950 | PHP15.484 | PHP774.20 |
| 3000 + | PHP13.936 | PHP696.80 |
*price indicative
- RS Stock No.:
- 133-3355
- Mfr. Part No.:
- DMN3042LFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3042LFDF | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.58mm | |
| Length | 2.05mm | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3042LFDF | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.58mm | ||
Length 2.05mm | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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