IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247 IXTH110N25T

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Subtotal (1 unit)*

PHP557.60

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PHP624.51

(inc. VAT)

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1 - 4PHP557.60
5 - 9PHP531.94
10 - 24PHP492.92
25 - 49PHP453.88
50 +PHP414.87

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RS Stock No.:
125-8047
Distrelec Article No.:
302-53-421
Mfr. Part No.:
IXTH110N25T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-247

Series

Trench

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

694W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.26mm

Height

21.46mm

Width

5.3 mm

Distrelec Product Id

30253421

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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