MPN

Wolfspeed C3M N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247

Name: Wolfspeed C3M N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247
Brand: Wolfspeed
SKU: 125-3453P
Availability: InStock

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Subtotal 25 units (supplied in a tube)*

PHP29,890.50

(exc. VAT)

PHP33,477.25

(inc. VAT)

Last RS stock

*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Wolfspeed
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	TO-247
	Series	C3M
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	113.5W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	4.5V
	Maximum Gate Source Voltage Vgs	19V
	Maximum Operating Temperature	150°C
	Height	23.6mm
	Length	16.13mm
	Width	5.21mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Wolfspeed
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 1kV
	Package Type TO-247
	Series C3M
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 113.5W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 4.5V
	Maximum Gate Source Voltage Vgs 19V
	Maximum Operating Temperature 150°C
	Height 23.6mm
	Length 16.13mm
	Width 5.21mm
	Standards/Approvals No
	Automotive Standard No

New C3M Silicon Carbide (SiC) MOSFET technology

Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range

New low-impedance package with driver source

8 mm of creepage/clearance between Drain and Source

High-speed switching with low output capacitance

High blocking voltage with low Drain-Source On-State Resistance

Avalanche ruggedness

Fast intrinsic diode with low Reverse Recovery

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