Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
- RS Stock No.:
- 125-0528
- Mfr. Part No.:
- TK100E06N1,S1X(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP682.94
(exc. VAT)
PHP764.895
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 30 unit(s) ready to ship from another location
- Plus 80 unit(s) shipping from January 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP136.588 | PHP682.94 |
| 25 - 45 | PHP132.492 | PHP662.46 |
| 50 - 120 | PHP128.516 | PHP642.58 |
| 125 - 245 | PHP124.66 | PHP623.30 |
| 250 + | PHP120.922 | PHP604.61 |
*price indicative
- RS Stock No.:
- 125-0528
- Mfr. Part No.:
- TK100E06N1,S1X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | U-MOSVIII-H | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.1mm | |
| Standards/Approvals | No | |
| Width | 4.45 mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series U-MOSVIII-H | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 15.1mm | ||
Standards/Approvals No | ||
Width 4.45 mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
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