- RS Stock No.:
- 124-9048
- Mfr. Part No.:
- IRFP7430PBF
- Manufacturer:
- Infineon
425 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Price Each (In a Tube of 25)
PHP173.436
(exc. VAT)
PHP194.248
(inc. VAT)
Units | Per Unit | Per Tube* |
25 - 25 | PHP173.436 | PHP4,335.90 |
50 - 100 | PHP168.234 | PHP4,205.85 |
125 - 225 | PHP163.186 | PHP4,079.65 |
250 - 475 | PHP158.291 | PHP3,957.275 |
500 + | PHP153.542 | PHP3,838.55 |
*price indicative |
- RS Stock No.:
- 124-9048
- Mfr. Part No.:
- IRFP7430PBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 195 A |
Maximum Drain Source Voltage | 40 V |
Package Type | TO-247AC |
Series | StrongIRFET |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.9V |
Minimum Gate Threshold Voltage | 2.2V |
Maximum Power Dissipation | 366 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 460 nC @ 10 V |
Length | 15.87mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Width | 5.31mm |
Minimum Operating Temperature | -55 °C |
Height | 20.7mm |