Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF

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Subtotal (1 tube of 50 units)*

PHP6,422.00

(exc. VAT)

PHP7,192.50

(inc. VAT)

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  • 450 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50PHP128.44PHP6,422.00
100 - 200PHP120.273PHP6,013.65
250 - 450PHP109.963PHP5,498.15
500 - 950PHP101.277PHP5,063.85
1000 +PHP93.866PHP4,693.30

*price indicative

RS Stock No.:
124-9026
Mfr. Part No.:
IRLB4030PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

87nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
MX

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