Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF
- RS Stock No.:
- 124-9026
- Mfr. Part No.:
- IRLB4030PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP6,422.00
(exc. VAT)
PHP7,192.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP128.44 | PHP6,422.00 |
| 100 - 200 | PHP120.273 | PHP6,013.65 |
| 250 - 450 | PHP109.963 | PHP5,498.15 |
| 500 - 950 | PHP101.277 | PHP5,063.85 |
| 1000 + | PHP93.866 | PHP4,693.30 |
*price indicative
- RS Stock No.:
- 124-9026
- Mfr. Part No.:
- IRLB4030PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Height 9.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFB4110PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-247 AUIRFP4110
