ROHM RRR040P03 Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin TSMT RQ5E040RPTL
- RS Stock No.:
- 124-6810
- Mfr. Part No.:
- RQ5E040RPTL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP563.72
(exc. VAT)
PHP631.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from March 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | PHP28.186 | PHP563.72 |
| 100 - 180 | PHP26.228 | PHP524.56 |
| 200 - 480 | PHP23.774 | PHP475.48 |
| 500 - 980 | PHP21.722 | PHP434.44 |
| 1000 + | PHP20.034 | PHP400.68 |
*price indicative
- RS Stock No.:
- 124-6810
- Mfr. Part No.:
- RQ5E040RPTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT | |
| Series | RRR040P03 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 72mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Width | 1.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT | ||
Series RRR040P03 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 72mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Width 1.6 mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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