onsemi Type N-Channel MOSFET, 2.2 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 124-5411
- Mfr. Part No.:
- NTR5198NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP25,284.00
(exc. VAT)
PHP28,317.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP8.428 | PHP25,284.00 |
| 6000 - 12000 | PHP7.661 | PHP22,983.00 |
| 15000 - 27000 | PHP7.023 | PHP21,069.00 |
| 30000 - 57000 | PHP6.483 | PHP19,449.00 |
| 60000 + | PHP6.02 | PHP18,060.00 |
*price indicative
- RS Stock No.:
- 124-5411
- Mfr. Part No.:
- NTR5198NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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