onsemi PowerTrench Type P-Channel MOSFET, 4.4 A, 100 V Enhancement, 8-Pin WDFN

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Subtotal (1 reel of 3000 units)*

PHP161,793.00

(exc. VAT)

PHP181,209.00

(inc. VAT)

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  • 3,000 unit(s) ready to ship from another location
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Units
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Per Reel*
3000 +PHP53.931PHP161,793.00

*price indicative

RS Stock No.:
124-1436
Mfr. Part No.:
FDMC86139P
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

100V

Package Type

WDFN

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

104mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.3V

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

40W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.3 mm

Height

0.725mm

Length

3.3mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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