DiodesZetex ZXMN6A25K N-Channel MOSFET, 10.7 A, 60 V Enhancement, 3-Pin TO-252 ZXMN6A25KTC
- RS Stock No.:
- 122-1426
- Mfr. Part No.:
- ZXMN6A25KTC
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (2500 units, on reels of 2500)*
PHP77,577.50
(exc. VAT)
PHP86,887.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from January 18, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP31.031 | PHP77,577.50 |
| 5000 - 7500 | PHP30.10 | PHP75,250.00 |
| 10000 - 22500 | PHP28.896 | PHP72,240.00 |
| 25000 - 47500 | PHP27.451 | PHP68,627.50 |
| 50000 + | PHP25.804 | PHP64,510.00 |
*price indicative
- RS Stock No.:
- 122-1426
- Mfr. Part No.:
- ZXMN6A25KTC
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ZXMN6A25K | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 9.85W | |
| Forward Voltage Vf | 850mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ZXMN6A25K | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 9.85W | ||
Forward Voltage Vf 850mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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