DiodesZetex DMN2041L N-Channel MOSFET, 6.4 A, 20 V Enhancement, 3-Pin SOT-23 DMN2041L-7
- RS Stock No.:
- 121-9546
- Mfr. Part No.:
- DMN2041L-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
PHP22,515.00
(exc. VAT)
PHP25,218.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from April 19, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP7.505 | PHP22,515.00 |
| 6000 - 9000 | PHP7.317 | PHP21,951.00 |
| 12000 - 27000 | PHP7.134 | PHP21,402.00 |
| 30000 - 57000 | PHP6.956 | PHP20,868.00 |
| 60000 + | PHP6.782 | PHP20,346.00 |
*price indicative
- RS Stock No.:
- 121-9546
- Mfr. Part No.:
- DMN2041L-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2041L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Maximum Power Dissipation Pd | 780mW | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2041L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Maximum Power Dissipation Pd 780mW | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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