N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

RS Stock No.:: 111-6459
Mfr. Part No.:: STB18N60DM2
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 5)

PHP146.206

(exc. VAT)

PHP163.751

(inc. VAT)

Temporarily out of stock - back order for despatch 18/03/2025, delivery within 10 working days from desptach date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
5 - 5	PHP146.206	PHP731.03
10 - 95	PHP141.82	PHP709.10
100 - 495	PHP133.31	PHP666.55
500 - 995	PHP121.312	PHP606.56
1000 +	PHP106.756	PHP533.78

**price indicative

RS Stock No.:: 111-6459
Mfr. Part No.:: STB18N60DM2
Manufacturer:: STMicroelectronics

STB18N60DM2, N-channel 600 V, 0.260 Ohm typ., 12 A MDMesh DM2 Power MOSFET in a D2PAK package
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	MDmesh DM2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	290 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	90 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Operating Temperature	+150 °C
Width	10.4mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	20 nC @ 10 V
Length	9.35mm
Transistor Material	Si
Forward Diode Voltage	1.6V
Height	4.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

N-Channel MDmesh DM2 Series, STMicroelectronics

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