Nexperia Type N-Channel MOSFET, 100 A, 80 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 103-8125
- Mfr. Part No.:
- PSMN4R4-80PS,127
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP11,964.90
(exc. VAT)
PHP13,400.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP239.298 | PHP11,964.90 |
| 100 - 200 | PHP227.332 | PHP11,366.60 |
| 250 - 450 | PHP215.966 | PHP10,798.30 |
| 500 - 950 | PHP205.168 | PHP10,258.40 |
| 1000 + | PHP194.909 | PHP9,745.45 |
*price indicative
- RS Stock No.:
- 103-8125
- Mfr. Part No.:
- PSMN4R4-80PS,127
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 306W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Length | 10.3mm | |
| Standards/Approvals | No | |
| Height | 16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 306W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Length 10.3mm | ||
Standards/Approvals No | ||
Height 16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 80 V Enhancement127
- Nexperia Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Nexperia Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Nexperia Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Nexperia Type N-Channel MOSFET 40 V Enhancement, 4-Pin TO-220
- Nexperia Type N-Channel MOSFET 80 V Enhancement127
- Nexperia Type N-Channel MOSFET 80 V Enhancement127