Vishay TrenchFET N-Channel MOSFET, 208 A, 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-BE3

N
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Subtotal (1 tape of 1 unit)*

PHP166.89

(exc. VAT)

PHP186.92

(inc. VAT)

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Tape(s)
Per Tape
1 - 9PHP166.89
10 - 24PHP108.80
25 - 99PHP64.54
100 - 499PHP62.70
500 +PHP60.85

*price indicative

RS Stock No.:
904-976
Mfr. Part No.:
SIR608DP-T1-BE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

208A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

PowerPAK

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0012Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50.5nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.15mm

Width

5.15mm

Standards/Approvals

ROHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay power MOSFET designed to provide efficient switching and a high power density. With a robust performance profile, it features low on-resistance, ensuring optimal operation within DC/DC converter applications.

TrenchFET Gen IV design ensures excellent efficiency

45 V Drain-source breakdown voltage for reliable performance

Low on-state resistance rated at 0.00120 Ohm at 10V

Robust continuous drain current of 208 A at 25 °C

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