Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07D3NG

N

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Subtotal (1 unit)*

PHP58,232.55

(exc. VAT)

PHP65,220.46

(inc. VAT)

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Units
Per Unit
1 +PHP58,232.55

*price indicative

RS Stock No.:
854-515
Mfr. Part No.:
MSCSM330AM07D3NG
Manufacturer:
Microchip
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Brand

Microchip

Channel Type

N channel

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3300V

Series

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

1918W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Transistor Configuration

Half Bridge

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.

Features low RDS(on) for enhanced efficiency

Offers excellent thermal and power cycling reliability

Designed with a copper baseplate for improved heat dissipation

Incorporates a CTI600 plastic enclosure that promotes increased creepage and clearance

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