ROHM N-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1
- RS Stock No.:
- 780-669P
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
N
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (20 units, supplied on a continuous strip)*
PHP4,710.50
(exc. VAT)
PHP5,275.76
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- 610 unit(s) shipping from October 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 20 - 98 | PHP235.525 |
| 100 + | PHP189.94 |
*price indicative
- RS Stock No.:
- 780-669P
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 0V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Height | 4.5mm | |
| Length | 15.5mm | |
| Width | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 0V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Height 4.5mm | ||
Length 15.5mm | ||
Width 10.2mm | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W
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