ROHM N channel-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1
- RS Stock No.:
- 780-669P
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
N
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View bulk pricing optionsSubtotal 20 units (supplied on a continuous strip)*
PHP4,573.30
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PHP5,122.10
(inc. VAT)
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In Stock
- 800 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 20 - 98 | PHP228.665 |
| 100 + | PHP184.41 |
*price indicative
- RS Stock No.:
- 780-669P
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 0V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.5mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 0V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 175°C | ||
Length 15.5mm | ||
Standards/Approvals RoHS Compliant | ||
Width 10.2mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W