ROHM N channel-Channel MOSFET, 3.9 A, 1700 V, 7-Pin TO SCT2H12NWBTL1

N

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Subtotal (1 tape of 2 units)*

PHP519.11

(exc. VAT)

PHP581.404

(inc. VAT)

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Units
Per Unit
Per Tape*
2 - 18PHP259.555PHP519.11
20 - 98PHP228.665PHP457.33
100 +PHP184.41PHP368.82

*price indicative

Packaging Options:
RS Stock No.:
780-669
Mfr. Part No.:
SCT2H12NWBTL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO

Mount Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance Rds

1.5Ω

Maximum Gate Source Voltage Vgs

0V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

175°C

Width

10.2mm

Standards/Approvals

RoHS Compliant

Length

15.5mm

Height

4.5mm

Automotive Standard

No

The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.

Drain to source voltage of 1700 V

Continuous drain current of 3.9 A

1.15 Ohm typical on-resistance

High power dissipation of 39 W

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