Semikron Danfoss SKM400GB176D, Type N-Channel IGBT Module, 430 A 1700 V, 7-Pin SEMITRANS, Panel

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

PHP39,413.46

(exc. VAT)

PHP44,143.08

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 16 unit(s) shipping from March 23, 2026
  • Plus 12 unit(s) shipping from March 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP39,413.46
10 - 49PHP38,231.06
50 - 99PHP37,084.13
100 - 249PHP36,260.41
250 +PHP35,472.15

*price indicative

RS Stock No.:
505-3245
Mfr. Part No.:
SKM400GB176D
Manufacturer:
Semikron Danfoss
Find similar products by selecting one or more attributes.
Select all

Brand

Semikron Danfoss

Maximum Continuous Collector Current Ic

430A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1700V

Number of Transistors

2

Package Type

SEMITRANS

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-40°C

Length

106.4mm

Height

30mm

Width

61.4 mm

Series

SKM400GB176D

Standards/Approvals

No

Automotive Standard

No

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links