STMicroelectronics ST8L65N0 N-Channel Power MOSFET, 35 A, 650 V N, 5-Pin PowerFlat HV ST8L65N050DM9
- RS Stock No.:
- 762-551
- Mfr. Part No.:
- ST8L65N050DM9
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
PHP568.17
(exc. VAT)
PHP636.35
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 150 unit(s) shipping from October 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP568.17 |
| 10 - 49 | PHP551.23 |
| 50 - 99 | PHP534.30 |
| 100 + | PHP460.38 |
*price indicative
- RS Stock No.:
- 762-551
- Mfr. Part No.:
- ST8L65N050DM9
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFlat HV | |
| Series | ST8L65N0 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFlat HV | ||
Series ST8L65N0 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
Related links
- STMicroelectronics ST8L65N0 N-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- STMicroelectronics M6 N-Channel MOSFET 600 V, 5-Pin PowerFlat HV
- STMicroelectronics M6 N-Channel MOSFET 600 V, 5-Pin PowerFlat HV STL19N60M6
- STMicroelectronics 650 V 6 A Diode 5-Pin PowerFlat HV
- STMicroelectronics 650 V 6 A Diode 5-Pin PowerFlat HV STPSC6H065DLF
- STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET 80 V N, 8-Pin PowerFLAT STL110N8F8
- STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET 80 V N, 8-Pin PowerFLAT STL180N8F8
- STMicroelectronics Single 1 N-Channel 600 V Enhancement, 8-Pin PowerFLAT (5 x 6) HV STL13N60M6