Vishay SIZF456LDT Dual N-Channel MOSFET, 60 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3FS SIZF456LDT-T1-UE3
- RS Stock No.:
- 736-357
- Mfr. Part No.:
- SIZF456LDT-T1-UE3
- Manufacturer:
- Vishay
N
Bulk discount available
Subtotal (1 tape of 1 unit)*
PHP133.97
(exc. VAT)
PHP150.05
(inc. VAT)
Stock information currently inaccessible - Please check back later
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP133.97 |
| 10 - 24 | PHP86.99 |
| 25 - 99 | PHP46.11 |
| 100 - 499 | PHP44.37 |
| 500 + | PHP43.50 |
*price indicative
- RS Stock No.:
- 736-357
- Mfr. Part No.:
- SIZF456LDT-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | SIZF456LDT | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0016Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series SIZF456LDT | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0016Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET offers high-performance dual N-channel functionality, providing efficient thermal management using flip chip technology to enhance heat dissipation. This device is specifically designed for demanding applications such as synchronous buck converters and telecom DC/DC circuits.
Robust design with a continuous drain current rating of 42.5 A
Guaranteed thermal stability with a maximum junction-to-ambient resistance of 28 °C/W
Related links
- Vishay SIZF5302DT Dual N-Channel MOSFET 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ270DT-T1-GE3
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3