Vishay SIEH3812EW N channel-Channel MOSFET, 322 A, 80 V Enhancement, 8-Pin PowerPAK 8 x 8 SIEH3812EW-T1-GE3
- RS Stock No.:
- 736-346
- Mfr. Part No.:
- SIEH3812EW-T1-GE3
- Manufacturer:
- Vishay
N
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PHP507.16
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PHP568.02
(inc. VAT)
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP507.16 |
| 10 - 49 | PHP314.04 |
| 50 - 99 | PHP243.58 |
| 100 + | PHP164.41 |
*price indicative
- RS Stock No.:
- 736-346
- Mfr. Part No.:
- SIEH3812EW-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 322A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIEH3812EW | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00175Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 417W | |
| Typical Gate Charge Qg @ Vgs | 154nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Width | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 322A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIEH3812EW | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00175Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 417W | ||
Typical Gate Charge Qg @ Vgs 154nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Width 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET delivers exceptional performance in high-efficiency applications, featuring an N-Channel design that supports significant continuous drain current, Ideal for Advanced energy management solutions.
Fully lead (Pb)-free and halogen-free construction for environmental compliance
Tested at 100% for R and UIS to guarantee reliability
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