Vishay TrenchFET P-Channel MOSFET, -230 A, -40 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ141ELR-T1_GE3
- RS Stock No.:
- 735-209
- Mfr. Part No.:
- SQJQ141ELR-T1_GE3
- Manufacturer:
- Vishay
N
Bulk discount available
Subtotal (1 unit)*
PHP349.71
(exc. VAT)
PHP391.68
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP349.71 |
| 10 - 49 | PHP216.61 |
| 50 - 99 | PHP167.89 |
| 100 + | PHP113.09 |
*price indicative
- RS Stock No.:
- 735-209
- Mfr. Part No.:
- SQJQ141ELR-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -230A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | PowerPAK (8x8LR) | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.004Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 497nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8 mm | |
| Height | 1.9mm | |
| Length | 10.42mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -230A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type PowerPAK (8x8LR) | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.004Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 497nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 8 mm | ||
Height 1.9mm | ||
Length 10.42mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Related links
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ160ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ570ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ118ER-T1_GE3
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay SQJQ186ER Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay SQJQ186ER Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ186ER-T1_GE3