Vishay SiR N channel-Channel MOSFET, 518 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4302DP

N

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP231.40

(exc. VAT)

PHP259.17

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
1 - 9PHP231.40
10 - 24PHP150.50
25 - 99PHP79.16
100 - 499PHP76.55
500 +PHP74.81

*price indicative

RS Stock No.:
735-148
Mfr. Part No.:
SiRS4302DP
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

518A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8S

Series

SiR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00057Ω

Channel Mode

Enhancement

Forward Voltage Vf

30V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

245W

Typical Gate Charge Qg @ Vgs

153nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5mm

Length

6mm

Standards/Approvals

RoHS

Height

2mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

87A continuous drain current at TA=25°C

Low RDS(on) x Qg figure-of-merit for superior switching performance

100% Rg and UIS tested construction

Related links