STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK
- RS Stock No.:
- 719-637
- Mfr. Part No.:
- SGT350R70GTK
- Manufacturer:
- STMicroelectronics
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PHP169,915.00
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PHP190,305.00
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 + | PHP67.966 | PHP169,915.00 |
*price indicative
- RS Stock No.:
- 719-637
- Mfr. Part No.:
- SGT350R70GTK
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | G-HEMT | |
| Mount Type | Surface Mount | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Power Dissipation Pd | 47W | |
| Maximum Gate Source Voltage Vgs | -1.4 to 7 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.7 mm | |
| Length | 6.2mm | |
| Height | 2.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series G-HEMT | ||
Mount Type Surface Mount | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Power Dissipation Pd 47W | ||
Maximum Gate Source Voltage Vgs -1.4 to 7 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.7 mm | ||
Length 6.2mm | ||
Height 2.4mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 700 V 6 A e-mode PowerGaN transistor combined with a well-established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high-power density and unbeatable efficiency performances. Recommended for consumer QR applications with zero current turn-on.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard