ROHM HT8MC5 Type P, Type N-Channel Single MOSFETs, 10 A, 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- RS Stock No.:
- 687-389P
- Mfr. Part No.:
- HT8MC5TB1
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
PHP2,069.50
(exc. VAT)
PHP2,318.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 200 unit(s) shipping from October 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 50 - 198 | PHP41.39 |
| 200 - 998 | PHP37.155 |
| 1000 - 1998 | PHP29.63 |
| 2000 + | PHP29.16 |
*price indicative
- RS Stock No.:
- 687-389P
- Mfr. Part No.:
- HT8MC5TB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HT8MC5 | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 97mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Length | 3.45mm | |
| Standards/Approvals | RoHS | |
| Width | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HT8MC5 | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 97mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Length 3.45mm | ||
Standards/Approvals RoHS | ||
Width 3.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM N channel and P channel power MOSFET designed for efficient motor drive applications. Built within an advanced HSMT8 package, this device boasts low on-state resistance, enabling enhanced power management while minimising heat generation. Its robust capabilities make it suitable for various applications demanding reliability and efficiency, particularly in environments where space is at a premium. With a Pb-free and RoHS-compliant design, it aligns with modern standards for environmental safety while delivering impressive specifications, ensuring versatile deployment across numerous electronic sectors.
Low on resistance enhances power efficiency and reduces energy loss
High Power small mold package (HSMT8) is ideal for space-constrained applications
Pb free plating and RoHS compliance ensure environmental friendliness
Halogen-free construction provides additional safety and compliance
Fully Rg and UIS tested for improved reliability under dynamic conditions
Embossed packaging optimises handling and insertion during manufacturing
Maximum junction temperature of 150°C allows reliable performance in high-heat environments.
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