ROHM SCT4018KWA Type N-Channel Single MOSFETs, 75 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL

RS Stock No.:: 687-342
Mfr. Part No.:: SCT4018KWATL
Manufacturer:: ROHM

ROHM SCT4018KWA Type N-Channel Single MOSFETs, 75 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL

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Bulk discount available

Subtotal (1 tape of 2 units)*

PHP3,491.85

(exc. VAT)

PHP3,910.872

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

1,000 unit(s) ready to ship from another location

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Units	Per Unit	Per Tape*
2 - 8	PHP1,745.925	PHP3,491.85
10 +	PHP1,693.73	PHP3,387.46

*price indicative

RS Stock No.:: 687-342
Mfr. Part No.:: SCT4018KWATL
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-263-7LA
	Series	SCT4018KWA
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	267W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	21 V
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Operating Temperature	150°C
	Height	4.5mm
	Standards/Approvals	RoHS
	Width	10.2 mm
	Length	15.4mm
	Automotive Standard	No

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-263-7LA
	Series SCT4018KWA
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 267W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 21 V
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Operating Temperature 150°C
	Height 4.5mm
	Standards/Approvals RoHS
	Width 10.2 mm
	Length 15.4mm
	Automotive Standard No

Datasheet - SCT4018KWATL

COO (Country of Origin):: TH

The ROHM N channel SiC power MOSFET, designed for efficient power management in a variety of applications. With a maximum drain-source voltage of 1200V and a low on-resistance of 18mΩ, this MOSFET optimises performance in high-efficiency systems like solar inverters and induction heating. It provides robust thermal management with a junction temperature range of up to 175°C, ensuring reliable operation even in demanding environments. The device features a fast switching speed, making it ideal for applications requiring high-frequency switching, thereby enhancing overall system efficiency and performance.

Low on resistance ensures minimal energy loss during operation

Supports fast switching speeds for improved efficiency

Designed for easy parallel operation, facilitating scalability

Robust thermal characteristics enable operation in extreme conditions

Pb free lead plating complies with RoHS standards for environmental safety

Wide creepage distance of 4.7 mm enhances reliability in high-voltage applications

Ideal for various applications including solar inverters and DC/DC converters

ROHM SCT4018KWA Type N-Channel Single MOSFETs, 75 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL

FREE delivery for orders over ₱3,000.00

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