ROHM SCT4018KWA Type N-Channel Single MOSFETs, 75 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL
- RS Stock No.:
- 687-342
- Mfr. Part No.:
- SCT4018KWATL
- Manufacturer:
- ROHM
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PHP3,610.70
(exc. VAT)
PHP4,043.98
(inc. VAT)
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In Stock
- Plus 1,000 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 8 | PHP1,805.35 | PHP3,610.70 |
| 10 + | PHP1,751.38 | PHP3,502.76 |
*price indicative
- RS Stock No.:
- 687-342
- Mfr. Part No.:
- SCT4018KWATL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT4018KWA | |
| Package Type | TO-263-7LA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 267W | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.2mm | |
| Length | 15.4mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT4018KWA | ||
Package Type TO-263-7LA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 267W | ||
Maximum Gate Source Voltage Vgs 21V | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.2mm | ||
Length 15.4mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM N channel SiC power MOSFET, designed for efficient power management in a variety of applications. With a maximum drain-source voltage of 1200V and a low on-resistance of 18mΩ, this MOSFET optimises performance in high-efficiency systems like solar inverters and induction heating. It provides robust thermal management with a junction temperature range of up to 175°C, ensuring reliable operation even in demanding environments. The device features a fast switching speed, making it ideal for applications requiring high-frequency switching, thereby enhancing overall system efficiency and performance.
Low on resistance ensures minimal energy loss during operation
Supports fast switching speeds for improved efficiency
Designed for easy parallel operation, facilitating scalability
Robust thermal characteristics enable operation in extreme conditions
Pb free lead plating complies with RoHS standards for environmental safety
Wide creepage distance of 4.7 mm enhances reliability in high-voltage applications
Ideal for various applications including solar inverters and DC/DC converters
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