Vishay SQS178EL Type N-Channel Single MOSFETs, 54 A, 72 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-135
- Mfr. Part No.:
- SQS178ELNW-T1_GE3
- Manufacturer:
- Vishay
N
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 1 unit)*
PHP46.11
(exc. VAT)
PHP51.64
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | PHP46.11 |
| 25 - 99 | PHP44.37 |
| 100 - 499 | PHP43.50 |
| 500 - 999 | PHP37.41 |
| 1000 + | PHP34.80 |
*price indicative
- RS Stock No.:
- 653-135
- Mfr. Part No.:
- SQS178ELNW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 72V | |
| Package Type | PowerPAK | |
| Series | SQS178EL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.012Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 72V | ||
Package Type PowerPAK | ||
Series SQS178EL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.012Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 65W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade N-channel MOSFET designed for high-efficiency switching in compact, thermally demanding environments. It supports up to 72 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in PowerPAK 1212-8SLW, it utilizes TrenchFET Gen IV technology for optimized electrical and thermal performance.
AEC Q101 qualified
Pb Free
Halogen free
Wettable flank terminals
RoHS compliant
Related links
- Vishay SQS178EL Type N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK SQS178ELNW-T1_GE3
- Vishay SQS174ELNW Type N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK
- Vishay SQ2310CES Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay SQS146 Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay SQS174ELNW Type N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK SQS174ELNW-T1_GE3
- Vishay SQS201CENW Type P-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SQJQ140ER Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ114EL Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK