Vishay SI8818EDB Type N-Channel Single MOSFETs, 2.2 A, 30 V Enhancement, 4-Pin PowerPAK SI8818EDB-T2-E1

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP29,901.00

(exc. VAT)

PHP33,489.00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per Unit
Per Reel*
3000 +PHP9.967PHP29,901.00

*price indicative

RS Stock No.:
653-090
Mfr. Part No.:
SI8818EDB-T2-E1
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SI8818EDB

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.143Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.9W

Typical Gate Charge Qg @ Vgs

2.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

0.8mm

Height

0.39mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy