Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 MIC94050YM4-TR

N

Subtotal (1 reel of 3000 units)*

PHP105,939.00

(exc. VAT)

PHP118,653.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP35.313PHP105,939.00

*price indicative

RS Stock No.:
599-040
Mfr. Part No.:
MIC94050YM4-TR
Manufacturer:
Microchip
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Brand

Microchip

Channel Type

N-Channel DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

9V

Package Type

SOT-23-5

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Depletion Mode

Maximum Power Dissipation Pd

360mW

Minimum Operating Temperature

-25°C

Maximum Gate Source Voltage Vgs

12 V

Forward Voltage Vf

1.8V

Maximum Operating Temperature

125°C

Length

3.05mm

Width

1.75 mm

Height

1.3mm

Standards/Approvals

RoHS, ISO/TS‑16949

Automotive Standard

No

COO (Country of Origin):
TH
The Microchip 4-terminal silicon gate P-channel MOSFET provides low on-resistance in a compact package. Designed for high-side switch applications where space is critical, it typically exhibits an on-resistance of 0.125Ω at a 4.5V gate-to-source voltage. The MOSFET operates with as low as 1.8V gate-to-source voltage.

Operates with 1.8V gate-to-source voltage

Separate substrate connection allows reverse blocking

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