Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND250K1-G
- RS Stock No.:
- 598-794
- Mfr. Part No.:
- LND250K1-G
- Manufacturer:
- Microchip
N
Subtotal (1 reel of 3000 units)*
PHP112,359.00
(exc. VAT)
PHP125,841.00
(inc. VAT)
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP37.453 | PHP112,359.00 |
*price indicative
- RS Stock No.:
- 598-794
- Mfr. Part No.:
- LND250K1-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -25°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Width | 1.75 mm | |
| Length | 3.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -25°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Width 1.75 mm | ||
Length 3.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
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