Toshiba N-Channel MOSFET, 2.2 A, 100 V, 8-Pin PS TPCP8003-H(TE85L,F
- RS Stock No.:
- 582-537P
- Mfr. Part No.:
- TPCP8003-H(TE85L,F
- Manufacturer:
- Toshiba
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Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 582-537P
- Mfr. Part No.:
- TPCP8003-H(TE85L,F
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.2 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PS | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Maximum Power Dissipation | 1.68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 2.4mm | |
| Typical Gate Charge @ Vgs | 4.5 nC @ 5 V, 7.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.2 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PS | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Maximum Power Dissipation 1.68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 2.4mm | ||
Typical Gate Charge @ Vgs 4.5 nC @ 5 V, 7.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
- COO (Country of Origin):
- JP
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