Infineon IPF N-Channel Power Transistor, 138 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1
- RS Stock No.:
- 349-407
- Mfr. Part No.:
- IPF067N20NM6ATMA1
- Manufacturer:
- Infineon
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PHP618.79
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP618.79 |
| 10 - 99 | PHP556.82 |
| 100 - 499 | PHP513.19 |
| 500 - 999 | PHP476.53 |
| 1000 + | PHP426.78 |
*price indicative
- RS Stock No.:
- 349-407
- Mfr. Part No.:
- IPF067N20NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 138A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IPF | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 138A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IPF | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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