Infineon CoolSiCTM Trench MOSFET Type N-Channel MOSFET, 200 A, 1200 V Enhancement EasyDUAL FF4MR12W2M1HPB11BPSA1

View all MOSFETs

Subtotal (1 unit)*

PHP31,915.31

(exc. VAT)

PHP35,745.15

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 18 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 +PHP31,915.31

*price indicative

RS Stock No.:
349-253
Mfr. Part No.:
FF4MR12W2M1HPB11BPSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

1200V

Package Type

EasyDUAL

Series

CoolSiCTM Trench MOSFET

Mount Type

Screw

Maximum Drain Source Resistance Rds

8.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.35V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60068, IEC 60747, IEC 60749

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyDUAL 2B CoolSiC MOSFET half bridge module is a 1200 V module featuring a low 4 mΩ gate resistance G1 and is equipped with an integrated NTC temperature sensor for precise thermal monitoring. It also includes pre applied thermal interface material for enhanced heat dissipation and utilizes PressFIT Contact Technology, ensuring reliable and efficient electrical connections. This module is designed for high performance applications where efficient power conversion and thermal management are critical.

Rugged mounting due to integrated mounting clamps

PressFIT contact technology

Integrated NTC temperature sensor

Pre applied thermal interface material

Related links