Infineon IMB N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
- RS Stock No.:
- 349-105
- Mfr. Part No.:
- IMBG120R181M2HXTMA1
- Manufacturer:
- Infineon
Currently unavailable
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- RS Stock No.:
- 349-105
- Mfr. Part No.:
- IMBG120R181M2HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMB | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 181.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Width | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMB | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 181.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Width 10.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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