Infineon CoolSiC Type N-Channel MOSFET, 83 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R020M2HXKSA1
- RS Stock No.:
- 349-063
- Mfr. Part No.:
- IMW65R020M2HXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP1,360.64
(exc. VAT)
PHP1,523.92
(inc. VAT)
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In Stock
- 240 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,360.64 |
| 10 - 99 | PHP1,224.49 |
| 100 + | PHP1,129.36 |
*price indicative
- RS Stock No.:
- 349-063
- Mfr. Part No.:
- IMW65R020M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 273W | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 273W | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and excellent ease of use. This MOSFET is designed to enable cost effective, highly efficient, and simplified designs, addressing the ever-growing demands of modern power systems and markets. It is an ideal solution for achieving high system efficiency in a wide range of applications, delivering reliable performance and superior functionality.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
Related links
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