Infineon CoolSiC Type N-Channel MOSFET, 47 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R040M1HXUMA1
- RS Stock No.:
- 349-042
- Mfr. Part No.:
- IMDQ75R040M1HXUMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
PHP810.80
(exc. VAT)
PHP908.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 750 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 - 9 | PHP810.80 |
| 10 - 99 | PHP729.63 |
| 100 - 499 | PHP672.90 |
| 500 - 999 | PHP624.03 |
| 1000 + | PHP559.44 |
*price indicative
- RS Stock No.:
- 349-042
- Mfr. Part No.:
- IMDQ75R040M1HXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-HDSOP-22 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-HDSOP-22 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.
Infineon proprietary die attach technology
Cutting edge top side cooling package
Driver source pin available
Enhanced robustness to withstand bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control
Related links
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