onsemi EliteSiC Type N-Channel MOSFET, 77 A, 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- RS Stock No.:
- 333-415
- Mfr. Part No.:
- NTBL023N065M3S
- Manufacturer:
- onsemi
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP939.10 |
| 10 - 99 | PHP844.84 |
| 100 + | PHP779.38 |
*price indicative
- RS Stock No.:
- 333-415
- Mfr. Part No.:
- NTBL023N065M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EliteSiC | |
| Package Type | HPSOF-8L | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32.6mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free | |
| Length | 9.9mm | |
| Width | 10.38 mm | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EliteSiC | ||
Package Type HPSOF-8L | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32.6mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free | ||
Length 9.9mm | ||
Width 10.38 mm | ||
Height 2.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor SiC MOSFET optimized for high-efficiency switching applications, offering low conduction losses and robust thermal performance. Its advanced design enhances reliability in demanding power systems while maintaining compact packaging. This device ensures efficient operation with minimal energy dissipation.
H PSOF8L package
RoHS compliant
Pb free
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