STMicroelectronics SCT0 MOSFET, 90 A, 1200 V, 7-Pin HU3PAK SCT019HU120G3AG

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PHP2,372.18

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PHP2,656.84

(inc. VAT)

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1 - 9PHP2,372.18
10 - 99PHP2,134.79
100 +PHP1,968.96

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Packaging Options:
RS Stock No.:
330-230
Mfr. Part No.:
SCT019HU120G3AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

1200V

Series

SCT0

Package Type

HU3PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

19.2mΩ

Forward Voltage Vf

3V

Maximum Power Dissipation Pd

500W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

111.2nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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