onsemi NVH N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L

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Subtotal 10 units (supplied in a tube)*

PHP9,087.40

(exc. VAT)

PHP10,177.90

(inc. VAT)

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Units
Per Unit
10 - 99PHP908.74
100 - 499PHP838.27
500 - 999PHP777.40
1000 +PHP631.09

*price indicative

Packaging Options:
RS Stock No.:
327-808P
Mfr. Part No.:
NVH4L032N065M3S
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247-4L

Series

NVH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

N

Maximum Power Dissipation Pd

187W

Forward Voltage Vf

4.5V

Maximum Gate Source Voltage Vgs

22V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free, RoHS 7a

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 32 mΩ device in the M3S TO-247-4L package. It is engineered for high-performance power applications, offering low on-resistance and excellent switching capabilities. This device is ideal for use in high-efficiency power conversion systems, including automotive, industrial, and renewable energy applications.

Devices are Pb Free and are RoHS Compliant

Qualified for Automotive According to AEC Q101

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