Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- RS Stock No.:
- 285-057
- Mfr. Part No.:
- ISC800P06LMATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 285-057
- Mfr. Part No.:
- ISC800P06LMATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -19.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -19.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.
Very low on resistance improves efficiency
100% avalanche tested for reliability
Pb free lead plating for compliance
Halogen free construction supports eco friendliness
Logic level operation for easy interfacing
Suitable for diverse industrial applications
Excellent thermal characteristics ensure reliability
Enhancement mode design for stable performance
Related links
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8 ISC750P10LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TDSON-8 ISC240P06LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1