onsemi, Type N, Type P-Channel Half Bridge IGBT Power Module, 800 A 1200 V, 11-Pin PIM11, Through Hole

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Subtotal 1 unit (supplied in a tray)*

PHP20,927.01

(exc. VAT)

PHP23,438.25

(inc. VAT)

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Packaging Options:
RS Stock No.:
277-059P
Mfr. Part No.:
NXH800H120L7QDSG
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

800A

Product Type

IGBT Power Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Configuration

Half Bridge

Package Type

PIM11

Mount Type

Through Hole

Channel Type

Type N, Type P

Pin Count

11

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Operating Temperature

175°C

Height

20.8mm

Length

152mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The ON Semiconductor Half Bridge IGBT Power Module features integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes, providing lower conduction and switching losses. This design enables high efficiency and superior reliability. The module is configured as a 1200V, 800A 2-in-1 half-bridge, making it Ideal for applications that require robust performance and optimal power conversion efficiency.

NTC thermistor

Isolated base plate

Solderable pins

Low inductive layout

Pb free

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